Metal contacts to lowly doped Si and ultra thin SOI
نویسندگان
چکیده
An increasing part of the semiconductor device community is using SOI wafers for the fabrication of modern CMOS generations (FINFET [1], Schottky barrier transistors [2], (bio-) sensor applications, optical devices and also as test vehicles to study the fundamental properties of 1D and 2D silicon structures. For SOI thicknesses below the Debye length it becomes interesting to study metal-Si contacts for lowly doped Si since the carrier concentration is dominated by the workfunction difference and the background doping of the SOI wafers becomes irrelevant [3]. We have studied the contacts to lowly doped pand n-type Si wafers as well as p-type doped SOI. The choice of metals was based on our ultimate goal to combine two or more metals that have to be etched selective to each other and selective to Si and SiO2 [3,4].
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